Self-organized evolution of Ge/Si(001) into intersecting bundles of horizontal nanowires during annealing
Sprache des Titels:
Englisch
Original Kurzfassung:
We report the observation of large scale self-assembly of long horizontal nanowires into orthogonally
oriented bundles, during
in situ
annealing of a few monolayers of Ge on Si(001). Results are
interpreted in terms of a collective wave-propagation mechanism, previously suggested for
interpreting ripple faceting on Ge/Si(1 1 10) surfaces. Quantitative agreement between experiments
and theory is found. The onset of the mechanism, the number of wires in the bundles, and their total
density can be controlled by carefully tuning the growth parameters.
Forschungs-