Victor Tapio Rangel - Kuoppa, Gang Chen, Wolfgang Jantsch,
"Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon"
: PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1399, Serie AIP Conference Proceedings, Vol. 1399, Seite(n) 379-380, 12-2011
Original Titel:
Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon
Sprache des Titels:
Englisch
Original Buchtitel:
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 1399
Original Kurzfassung:
Temperature dependent Capacitance?Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3×1011?cm?2. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 1016?cm?3, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2×1015?cm?3 and 5×1015?cm?3, are also found. TCV results suggest they are related to the Ge QDs.