Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds
Sprache des Titels:
We present an approach that uses existing nanoimprint molds and reduces the size of the resulting features significantly via a remastering process utilizing the anisotropic etchant tetramethylammonium hydroxide and a mold casting step. Inverted pyramidal structures and V-grooves were imprinted using these 2.5-dimensional (2.5D) replica molds. Pattern transfer into silicon (Si) substrates was established with an intermediate silicon nitride (SiN x ) layer that can be etched with a much larger selectivity against the imprint resist than the Si substrate. The 2.5D resist profiles are thus transferred back into binary structures in the SiN x layer and subsequently into the Si substrate. A substantial size reduction of the diameter of pits from 91 to 33 nm and the width of lines from 600 to 142 nm was achieved.