The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.
Sprache der Kurzfassung:
Englisch
Journal:
Solid-State Electronics
Volume:
65?66
Number:
0
Seitenreferenz:
81 - 87
Erscheinungsjahr:
2011
ISSN:
0038-1101
Anzahl der Seiten:
7
Notiz zur Publikation:
<ce:title>Selected Papers from the ESSDERC 2010 Conference</ce:title>
Forschungs-