R. Job, W. R. Fahrner, A. Ulyashin, Yu. A. Bumay, A. I. Ivanovo, Leopold Palmetshofer,
"Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon"
, in Solid State Phenomena, Vol. 57-58, Seite(n) 91-96, 1997, ISSN: 1662-9779, R. Job, W.R. Rahrner, A.G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer: Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon, Diffusion and Defect Data B 57-58, 91 (1997)
Original Titel:
Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon
Sprache des Titels:
Englisch
Journal:
Solid State Phenomena
Volume:
57-58
Seitenreferenz:
91-96
Erscheinungsjahr:
1997
Notiz zum Zitat:
R. Job, W.R. Rahrner, A.G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer: Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen-Implanted Czochralski Silicon, Diffusion and Defect Data B 57-58, 91 (1997)