T. Hörmann, Gerhard Brunthaler,
"Trap model for the metal-insulator transition in two-dimensional Si-MOS structures"
, in W. Jantsch, F. Schäffler : Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006, Serie AIP Conference Proceedings Vol. 893, Melville, NY, Seite(n) 187-188, 2007
Original Titel:
Trap model for the metal-insulator transition in two-dimensional Si-MOS structures
Sprache des Titels:
Englisch
Original Buchtitel:
Proceedings of the 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24-28 July 2006